This code is designed to numerically solve the Drift-Diffusion-Poisson equations for semiconductor devices in 2D and 3D. The code runs in parallel using multithreading through the Intel Thread Building Blocks. Poisson's equation is solved using the mixed finite element method. The drift-diffusion equations for electron and hole transport are discrititzed with the local discontinuous Galerkin method and time stepping is performed using implicit-explicit (IMEX) methods.